JPS6058609A - 半導体薄膜結晶層の製造方法 - Google Patents
半導体薄膜結晶層の製造方法Info
- Publication number
- JPS6058609A JPS6058609A JP58166666A JP16666683A JPS6058609A JP S6058609 A JPS6058609 A JP S6058609A JP 58166666 A JP58166666 A JP 58166666A JP 16666683 A JP16666683 A JP 16666683A JP S6058609 A JPS6058609 A JP S6058609A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- scanning
- crystal layer
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 10
- 238000000137 annealing Methods 0.000 abstract description 9
- 238000010894 electron beam technology Methods 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000035622 drinking Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58166666A JPS6058609A (ja) | 1983-09-12 | 1983-09-12 | 半導体薄膜結晶層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58166666A JPS6058609A (ja) | 1983-09-12 | 1983-09-12 | 半導体薄膜結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6058609A true JPS6058609A (ja) | 1985-04-04 |
| JPH0136974B2 JPH0136974B2 (en]) | 1989-08-03 |
Family
ID=15835475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58166666A Granted JPS6058609A (ja) | 1983-09-12 | 1983-09-12 | 半導体薄膜結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6058609A (en]) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627113A (ja) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | 電子ビ−ムアニ−ル方法 |
| JPH01168118A (ja) * | 1987-12-24 | 1989-07-03 | Fujitsu Ltd | ディジタル式位相比較回路 |
| JPH0264232U (en]) * | 1988-11-02 | 1990-05-15 | ||
| JPH0879031A (ja) * | 1994-09-07 | 1996-03-22 | Nec Corp | 位相周波数比較器 |
| JP2008227122A (ja) * | 2007-03-13 | 2008-09-25 | Sumitomo Heavy Ind Ltd | レーザアニール方法およびレーザアニール装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135631A (ja) * | 1982-02-08 | 1983-08-12 | Fujitsu Ltd | ラテラルエピタキシヤル成長法 |
-
1983
- 1983-09-12 JP JP58166666A patent/JPS6058609A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135631A (ja) * | 1982-02-08 | 1983-08-12 | Fujitsu Ltd | ラテラルエピタキシヤル成長法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS627113A (ja) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | 電子ビ−ムアニ−ル方法 |
| JPH01168118A (ja) * | 1987-12-24 | 1989-07-03 | Fujitsu Ltd | ディジタル式位相比較回路 |
| JPH0264232U (en]) * | 1988-11-02 | 1990-05-15 | ||
| JPH0879031A (ja) * | 1994-09-07 | 1996-03-22 | Nec Corp | 位相周波数比較器 |
| JP2008227122A (ja) * | 2007-03-13 | 2008-09-25 | Sumitomo Heavy Ind Ltd | レーザアニール方法およびレーザアニール装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136974B2 (en]) | 1989-08-03 |
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